FQPF6N80C 6N80C 6N80 FQPF6N80 MOSFET transistor

Description

FQPF6N80C 6N80C 6N80 FQPF6N80 MOSFET transistor

The FQPF6N80C (also marked as 6N80C, 6N80, or FQPF6N80) is a high-voltage, N-channel enhancement mode power field-effect transistor (MOSFET).

• Type: N-Channel MOSFET
• Drain-Source Voltage V_DSS: 800 V
• Continuous Drain Current I_D: 5.5 A
• On-State Resistance R_DS_on 2.5 Ω (Maximum at V_GS = 10 V)
• Gate Charge Q_g: 21 nC (Typical)
• Package Type: TO-220F (The “F” designates a fully isolated, plastic-molded package package)