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FQPF8N80C 8N80C 8N80 MOSFET transistor
In Stock
In Stock
Shipping Fee of ₹ 100
Shipping Fee of ₹ 100
Description
FQPF8N80C 8N80C 8N80 MOSFET transistor
The FQPF8N80C (commonly marked on the component body as 8N80C or 8N80) is a high-voltage N-Channel enhancement mode power MOSFET . It is designed specifically for fast-switching, high-efficiency electrical layouts, heavily relying on planar stripe and DMOS technology to reduce overall on-state resistance.
Technical Specifications
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- Maximum Drain-Source Voltage V_DSS: 800V
- Maximum Continuous Drain Current I_D: 8.0A
- Static Drain-Source On-Resistance(R_DSon: 1.55 Ω maximum (tested at \ V_GS = 10V)
- Total Gate Charge Q_g: 35 nC typical
- Package Type: TO-220F (fully isolated plastic package, which reduces the need for extra isolation hardware on a heatsink)
- Maximum Power Dissipation P_d: 59W
Common Applications
Due to its high voltage tolerances and fast recovery cycles, it is frequently used in the following electronic fields:
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- Switched-Mode Power Supplies (SMPS)
- Active Power Factor Correction (PFC) modules
- Electronic lamp ballasts and backlights
- Uninterruptible Power Supplies (UPS)
Understanding the Differences: FQP8N80C vs. FQPF8N80C
You may come across variants that drop the “F” in the prefix. The differences come down to thermal dissipation and the package style:
- FQPF8N80C: Packaged in a TO-220F plastic housing. The tab is insulated. It handles a lower total power dissipation (59W) because plastic transfers heat slower.
- FQP8N80C: Packaged in a standard TO-220 housing with an exposed metal tab. It handles a much higher total power dissipation (178W) but requires insulating pads if mounted on shared metal heatsinks
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