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FQPF10N60C 10N60C 10N60 FQPF10N60 MOSFET transistor
In Stock
In Stock
Shipping Fee of ₹ 100
Shipping Fee of ₹ 100
Description
FQPF10N60C 10N60C 10N60 FQPF10N60 MOSFET transistor
The FQPF10N60C (also frequently referred to as 10N60C, 10N60, or FQPF10N60) is a high-voltage N-Channel enhancement mode power MOSFET . It utilizes proprietary planar stripe DMOS technology designed to minimize on-state resistance and manage heavy energy pulses in high-efficiency power systems.
Technical Specifications
The standard operating parameters for this component include:
- Drain-to-Source Voltage V_DSS: 600V
- Continuous Drain Current I_D: 9.5A (often rounded or labeled as 10A in general market listings)
- Static Drain-Source On-Resistance R_DSon: 0.73 Ω (730 mΩ) maximum at a gate voltage V_GS of 10V
- Gate Charge Q_g: 44 nC typical (57 nC max)
- Package Type: TO-220F (The “F” suffix designates a fully isolated plastic package, providing protection without needing separate insulation sheets).
Typical Applications
This transistor is built for demanding electronic environments that require fast switching speeds and robust power regulation, including:
- Switched-Mode Power Supplies (SMPS)
- Active Power Factor Correction (PFC) systems
- Electronic lamp ballasts utilizing half-bridge topologies
- High-voltage motor control and industrial power management circuits
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FQPF10N60C 10N60C 10N60 FQPF10N60 MOSFET transistor
Original price was: ₹150.₹70Current price is: ₹70.
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