FQPF12N60C 12N60C 12N60 FQPF12N60 MOSFET transistor

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Description

FQPF12N60C 12N60C 12N60 FQPF12N60 MOSFET transistor

The FQPF12N60C (also frequently referred to interchangeably by shorthand codes like 12N60C, 12N60, or FQPF12N60) is an N-Channel enhancement mode power field-effect transistor (MOSFET). this high-voltage component is widely utilized for efficient switching applications in electronic power systems. 
Technical Specifications
    • Transistor Type: N-Channel Power MOSFET
    • Drain-Source Breakdown Voltage V_DSS: 600V
    • Continuous Drain Current I_D: 12A (at \(T_C = 25^\circ C\))
    • Static Drain-Source On-Resistance R_DSon: 650 mΩ (Maximum at \(V_GS = 10V)
    • Gate Charge Q_g: 48 nC typical
    • Package Type: TO-220F (The “F” denotes a fully isolated plastic package, eliminating the need for an insulating mica washer when mounting to a heatsink) 

Key Differences in Part Numbers
While vendors often group these terms together, there are distinct differences between the original versions in the datasheets:
    • FQPF12N60: The base original version. It features a lower continuous drain current rating of 5.8A in the isolated TO-220F package, compared to the upgraded “C” variant. 
    • FQPF12N60C: The upgraded version utilizing advanced planar stripe DMOS technology. It provides the full 12A current capabilities and optimized switching performance. 
    • 12N60 / 12N60C: Generic or shorthand industry shorthand markings stamped onto the physical casing of the transistor. 

Primary Applications
  • Switch-Mode Power Supplies (SMPS)
  • High-voltage DC-DC Converters
  • Active Power Factor Correction (PFC)

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