FQPF6N60C 6N60C 6N60 FQPF6N60 MOSFET transistor

Description

FQPF6N60C 6N60C 6N60 FQPF6N60 MOSFET transistor

The FQPF6N60C (also frequently labeled as 6N60C, 6N60, or FQPF6N60) is an N-Channel enhancement mode power field-effect transistor (MOSFET) designed primarily for high-voltage, high-speed switching applications.  it is heavily utilized in power supplies, inverters, and lighting ballasts.

• Continuous Drain Current (\(I_{D}\)): 5.5A to 6A (depending on the specific variation and temperature).
• Drain-Source Voltage (\(V_{DSS}\)): 600V maximum capacity.
• Static Drain-Source On-Resistance (\(R_{DS(on)}\)): 2.0 Ω typical at \(V_{GS} = 10\text{V}\).
• Package Type: TO-220F (the “F” denotes a fully isolated, plastic-molded package, preventing short circuits to external heatsinks).
• Gate Charge (\(Q_{g}\)): 16 nC typical, enabling high-speed switching frequencies.

• SMPS: Switched-mode power supplies for televisions, PCs, and electronic adapters.
• PFC: Active power factor correction modules.
• Ballasts: Half-bridge electronic lamp ballasts for fluorescent lighting networks.
• Motor Drivers: Low-power DC motor drivers and specialized inverter circuits.

Type Designator: FQP6N60C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd  – Maximum Power Dissipation: 125 W
|Vds| – Maximum Drain-Source Voltage: 600 V
|Vgs| – Maximum Gate-Source Voltage: 30 V
|Id|  – Maximum Drain Current: 5.5 A
Tj  – Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth| – Maximum Gate-Threshold Voltage: 4 V
Qg  – Total Gate Charge: 16 nC
RDSon – Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220